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IRF7607
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
20
–––
–––
0.016
–––
–––
V V GS = 0V, I D = 250μA
V/ ° C Reference to 25 ° C, I D = 1mA
?
R DS(on)
V GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
0.60
–––
–––
–––
0.030 V GS = 4.5V, I D = 6.5A R
0.045 V GS = 2.5V, I D = 5.2A R
1.2 V V DS = V GS , I D = 250μA
g fs
Forward Transconductance
13
–––
–––
S V DS = 10V, I D = 6.5A
I DSS
I GSS
Q g
Q gs
Q gd
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
2.2
3.5
1.0 V DS = 16V, V GS = 0V
μA
25 V DS = 16V, V GS = 0V, T J = 70 ° C
-100 V GS = -12V
nA
100 V GS = 12V
22 I D = 6.5A
3.3 nC V DS = 10V
5.3 V GS = 5.0V R
t d(on)
Turn-On Delay Time
–––
8.5
–––
V DD = 10V
t r
t d(off)
Rise Time
Turn-Off Delay Time
–––
–––
11
36
–––
–––
ns
I D = 1.0A
R G = 6.0 ?
t f
C iss
C oss
Fall Time
Input Capacitance
Output Capacitance
–––
–––
–––
16
1310
150
–––
–––
–––
R D = 10 ? R
V GS = 0V
pF V DS = 15V
C rss
Reverse Transfer Capacitance
–––
36
––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Q
–––
–––
–––
–––
1.8
50
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
19
13
1.2
29
20
V
ns
nC
T J = 25 ° C, I S = 1.7A, V GS = 0V  R
T J = 25 ° C, I F = 1.7A
di/dt = 100A/μs R
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
R Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
S Surface mounted on FR-4 board, t ≤ 5sec.
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